BC847BPDW1T1G ON Semiconductor, BC847BPDW1T1G Datasheet

Bipolar Small Signal 100mA 50V Dual Complementary

BC847BPDW1T1G

Manufacturer Part Number
BC847BPDW1T1G
Description
Bipolar Small Signal 100mA 50V Dual Complementary
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC847BPDW1T1G

Dc Collector/base Gain Hfe Min
150 at 10 uA at 5 V
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Package / Case
SC-70-6
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V at NPN, 5 V at PNP
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
380 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
2
Collector-emitter Voltage
45V
Collector-base Voltage(max)
50V
Emitter-base Voltage (max)
6/5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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BC846BPDW1T1G,
BC847BPDW1T1G,
BC848CPDW1T1G
Dual General Purpose
Transistors
NPN/PNP Duals (Complementary)
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 6
MAXIMUM RATINGS − NPN
MAXIMUM RATINGS − PNP
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses
above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector-Emitter Voltage
Collector-Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
These transistors are designed for general purpose amplifier
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Per Device
FR−5 Board (Note 1) T
Derate above 25°C
Junction−to−Ambient
Characteristic
Rating
Rating
A
= 25°C
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
Symbol
Symbol
Symbol
T
V
V
V
V
V
V
R
J
P
, T
CEO
CBO
EBO
CEO
CBO
EBO
I
I
qJA
C
C
D
stg
−55 to +150
Value
Value
−100
−5.0
Max
100
−65
−45
−30
−80
−50
−30
380
250
328
6.0
3.0
65
45
30
80
50
30
mW/°C
mAdc
mAdc
1
°C/W
Unit
Unit
Unit
mW
°C
V
V
V
V
V
V
BC846BPDW1T1G
BC847BPDW1T1G
BC847BPDW1T2G
BC848CPDW1T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
1
Q
ORDERING INFORMATION
(3)
(4)
1
http://onsemi.com
XX = Device Code
M = Date Code
G = Pb−Free Package
CASE 419B
SOT−363
STYLE 1
Mark
BB
BF
BF
BL
(5)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−363
SOT−363
SOT−363
SOT−363
Package
(2)
Publication Order Number:
BC846BPDW1T1/D
6
1
MARKING
DIAGRAM
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
(1)
(6)
Shipping
Q
XX MG
3000 /
3000 /
3000 /
3000 /
2
G

Related parts for BC847BPDW1T1G

BC847BPDW1T1G Summary of contents

Page 1

... EBO I 100 mAdc C Symbol Value Unit V −65 V CEO −45 −30 V −80 V CBO −50 BC846BPDW1T1G −30 V −5.0 V EBO BC847BPDW1T1G I −100 mAdc C BC847BPDW1T2G BC848CPDW1T1G Symbol Max Unit †For information on tape and reel specifications, P 380 mW D 250 3.0 mW/°C R 328 °C/W qJA −55 to +150 ° ...

Page 2

ELECTRICAL CHARACTERISTICS (NPN) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mA) C Collector −Emitter Breakdown Voltage ( mA Collector −Base Breakdown Voltage ( mA) C Emitter −Base Breakdown ...

Page 3

ELECTRICAL CHARACTERISTICS (PNP) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C Collector −Emitter Breakdown Voltage (I = −10 mA Collector −Base Breakdown Voltage (I = −10 mA) C Emitter −Base Breakdown ...

Page 4

TYPICAL NPN CHARACTERISTICS − BC846 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1 1 0.9 −55°C ...

Page 5

TYPICAL NPN CHARACTERISTICS − BC846 6.0 C 4.0 ob 2.0 0.1 0.2 0.5 1.0 2.0 5 REVERSE VOLTAGE (VOLTS) R Figure 7. Capacitance T = 25° ...

Page 6

TYPICAL PNP CHARACTERISTICS — BC846 500 150°C 400 25°C 300 −55°C 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 9. DC Current Gain vs. Collector Current 1 0 0.8 0.7 ...

Page 7

TYPICAL PNP CHARACTERISTICS — BC846 8.0 6 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 - REVERSE VOLTAGE (VOLTS) R Figure 15. Capacitance 500 T = ...

Page 8

TYPICAL NPN CHARACTERISTICS − BC847 SERIES 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 17. DC Current Gain vs. Collector Current 1.1 1 0.9 ...

Page 9

TYPICAL NPN CHARACTERISTICS − BC847 SERIES 10 7 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8 REVERSE VOLTAGE (VOLTS) R Figure 23. Capacitances 400 300 T = 25°C A 200 ...

Page 10

TYPICAL PNP CHARACTERISTICS − BC847 SERIES 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 25. DC Current Gain vs. Collector Current 1 0 0.8 ...

Page 11

TYPICAL PNP CHARACTERISTICS − BC847 SERIES 7.0 5 3.0 2.0 1.0 -0.6 -1.0 -2.0 -4.0 -6.0 -0 REVERSE VOLTAGE (VOLTS) R Figure 31. Capacitances 400 300 T = 25°C A 200 150 100 ...

Page 12

TYPICAL NPN CHARACTERISTICS − BC848 SERIES 1000 900 800 150°C 700 600 25°C 500 400 −55°C 300 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 33. DC Current Gain vs. Collector Current 1.1 1 ...

Page 13

TYPICAL NPN CHARACTERISTICS − BC848 SERIES 10 7 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8 REVERSE VOLTAGE (VOLTS) R Figure 39. Capacitances 400 300 T = 25°C A 200 ...

Page 14

TYPICAL PNP CHARACTERISTICS − BC848 SERIES 1000 150°C 900 800 700 25°C 600 500 400 −55°C 300 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 41. DC Current Gain vs. Collector Current 1 ...

Page 15

TYPICAL PNP CHARACTERISTICS − BC848 SERIES 7.0 5 3.0 2.0 1.0 -0.6 -1.0 -2.0 -4.0 -6.0 -0 REVERSE VOLTAGE (VOLTS) R Figure 47. Capacitances 400 300 T = 25°C A 200 150 100 ...

Page 16

D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0 1.0 -200 1 s -100 T = 25° 25°C - BC558 BC557 -10 BC556 -5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND ...

Page 17

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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