BC847BPDW1T1G ON Semiconductor, BC847BPDW1T1G Datasheet - Page 4

Bipolar Small Signal 100mA 50V Dual Complementary

BC847BPDW1T1G

Manufacturer Part Number
BC847BPDW1T1G
Description
Bipolar Small Signal 100mA 50V Dual Complementary
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC847BPDW1T1G

Dc Collector/base Gain Hfe Min
150 at 10 uA at 5 V
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Package / Case
SC-70-6
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V at NPN, 5 V at PNP
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
380 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
2
Collector-emitter Voltage
45V
Collector-base Voltage(max)
50V
Emitter-base Voltage (max)
6/5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC847BPDW1T1G
Manufacturer:
ON Semiconductor
Quantity:
106 980
Part Number:
BC847BPDW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BC847BPDW1T1G
Manufacturer:
NXP
Quantity:
7 000
Part Number:
BC847BPDW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BC847BPDW1T1G
Quantity:
500
Company:
Part Number:
BC847BPDW1T1G
Quantity:
600
Company:
Part Number:
BC847BPDW1T1G
Quantity:
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0
0.02
0.001
0.0001
Figure 3. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
−55°C
150°C
25°C
I
Figure 1. DC Current Gain vs. Collector
C
0.05
Figure 5. Collector Saturation Region
/I
B
= 20
20 mA
0.1
I
C
I
C
10 mA
, COLLECTOR CURRENT (A)
I
, COLLECTOR CURRENT (A)
C
0.01
0.2
I
=
0.001
B
Collector Current
, BASE CURRENT (mA)
50 mA
Current
0.5
100 mA
1.0
TYPICAL NPN CHARACTERISTICS − BC846
2.0
0.1
0.01
V
CE
5.0
200 mA
T
= 1 V
A
= 25°C
http://onsemi.com
10
20
1
0.1
4
0.30
0.25
0.20
0.15
0.10
0.05
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0.2
0.0001
0.0001
Figure 6. Base−Emitter Temperature Coefficient
Figure 2. Collector Emitter Saturation Voltage
150°C
−55°C
Figure 4. Base Emitter Voltage vs. Collector
25°C
I
C
V
0.5
/I
CE
B
= 20
q
= 5 V
VB
1.0
I
I
C
C
for V
I
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
C
, COLLECTOR CURRENT (mA)
vs. Collector Current
0.001
0.001
BE
2.0
Current
5.0
-55°C to 125°C
10
0.01
0.01
20
−55°C
150°C
25°C
50
100
0.1
200
0.1

Related parts for BC847BPDW1T1G