ZVN2120GTA Diodes Inc, ZVN2120GTA Datasheet - Page 2

• Manufacturer Part Number: ZVN2120GTA
• Description: MOSFET Power N-Chnl 200V
• Manufacturer: Diodes Inc

Specifications of ZVN2120GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
1.6
1.2
0.8
0.4
2.0
16
10
1
20
12
0
On-resistance vs gate-source voltage
8
4
0
1
0
Voltage Saturation Characteristics
0
V
V
V
DS
GS
GS-
Output Characteristics
10
-Gate Source Voltage (Volts)
- Drain Source Voltage (Volts)
2
Gate Source Voltage (Volts)
2
3
20
4
4
TYPICAL CHARACTERISTICS
5 6 7 8 9 10
30
6
V
GS=
40
10V
8
8V
7V
6V
50
20
10
5V
3V
2V
4V
I
1.0A
0.5A
0.5A
0.1A
I
1.0A
0.1A
D=
D=
3 - 391
Normalised R
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.2
1.0
1.4
0.8
0
0.6
0.4
0.2
0
0
0
-40 -20
Saturation Characteristics
V
1
DS
Transfer Characteristics
- Drain Source Voltage (Volts)
V
2
GS-
DS(on)
2
T
0 20 40 60 80
j
-Junction Temperature (°C)
Gate Source Voltage (Volts)
3
and V
4
4
ZVN2120G
5
GS(th)
6
6
100
7
v Temperature
120
8
140 160
8
V
I
V
D=
I
GS=
D=
GS=
9
250mA
1mA
10V
V
10V
DS
180
10
10
10V
V
25V
7V
6V
8V
5V
4V
3V
V
2V
DS=
GS=