ZVN2120GTA Diodes Inc, ZVN2120GTA Datasheet - Page 3

• Manufacturer Part Number: ZVN2120GTA
• Description: MOSFET Power N-Chnl 200V
• Manufacturer: Diodes Inc

Specifications of ZVN2120GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZVN2120G
500
400
300
200
100
100
80
Capacitance v drain-source voltage
60
40
20
0
Transconductance v drain current
0
0
0.2
V
I
D(on)
DS
0.4
10
-Drain Source Voltage (Volts)
- Drain Current (Amps)
0.6
V
DS=
0.8 1.0
20
25V
TYPICAL CHARACTERISTICS
1.2
30
1.4
1.6 1.8 2.0
40
50
3 - 392
C
C
C
iss
oss
rss
Transconductance v gate-source voltage
500
400
300
200
100
12
16
14
10
8
0
6
4
2
0
Gate charge v gate-source voltage
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I
D=
V
2
GS
700mA
-Gate Source Voltage (Volts)
Q-Charge (nC)
4
6
V
DS=
25V
8
10
150V
100V
V
50V
DS
=