ZXMP6A17N8TC Diodes Inc, ZXMP6A17N8TC Datasheet - Page 5

• Manufacturer Part Number: ZXMP6A17N8TC
• Description: MOSFET Power MOSFET,P-CHANNEL 60V, -3.4A/-2.8A
• Manufacturer: Diodes Inc

Specifications of ZXMP6A17N8TC

• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.125 Ohms
• Forward Transconductance Gfs (max / Min): 4.7 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.7 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
0.01
0.01
100
Typical Transfer Characteristics
0.1
0.1
0.1
10
10
10
1
1
On-Resistance v Drain Current
1
0.1
1
T = 25°C
2V
T = 25°C
0.1
-V
-V
Output Characteristics
T = 150°C
DS
GS
-I
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
Drain Current (A)
2
1
2.5V
1
T = 25°C
10V
3V
3
3.5V
5V
-V
DS
10
-V
10
4V
= 10V
GS
4V
3.5V
2.5V
3V
10V
-V
2V
www.diodes.com
5V
GS
4
5 of 8
0.01
Normalised Curves v Temperature
0.01
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
0.1
10
10
Source-Drain Diode Forward Voltage
1
1
-50
0.2
T = 150°C
0.1
-V
-V
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
0.4
T = 150°C
Diodes Incorporated
0
Drain-Source Voltage (V)
Source-Drain Voltage (V)
A Product Line of
V
I
D
GS
0.6
= -250uA
= V
1
50
DS
10V
T = 25°C
0.8
V
I
D
GS
= - 2.3A
= -10V
100
ZXMP6A17N8
5V
10
1.0
V
4.5V
V
GS
3.5V
3V
R
GS(th)
2V
1.5V
= 0V
2.5V
DS(on)
© Diodes Incorporated
-V
GS
150
1.2
March 2010