ZXMP6A17N8TC Diodes Inc, ZXMP6A17N8TC Datasheet - Page 7

• Manufacturer Part Number: ZXMP6A17N8TC
• Description: MOSFET Power MOSFET,P-CHANNEL 60V, -3.4A/-2.8A
• Manufacturer: Diodes Inc

Specifications of ZXMP6A17N8TC

• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.125 Ohms
• Forward Transconductance Gfs (max / Min): 4.7 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.7 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package Outline Dimensions
Suggested Pad Layout
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
DIM
A1
D
H
A
E
L
0.053
0.004
0.189
0.228
0.150
0.016
Min.
Inches
0.069
0.010
0.197
0.244
0.157
0.050
Max.
0.024
0.6
Min.
1.35
0.10
4.80
5.80
3.80
0.40
0.275
Millimeters
7.0
www.diodes.com
Max.
1.75
0.25
5.00
6.20
4.00
1.27
7 of 8
DIM
e
b
c
θ
h
-
0.060
0.155
1.52
0.013
0.008
0.010
4.0
Min.
0.050
1.27
0.050 BSC
0°
-
inches
Inches
mm
Diodes Incorporated
0.020
0.010
0.020
Max.
8°
A Product Line of
-
θ
Min.
0.33
0.19
0.25
Millimeters
0°
1.27 BSC
-
Max.
0.51
0.25
0.50
8°
ZXMP6A17N8
-
© Diodes Incorporated
March 2010