IRF9Z24SPBF Vishay, IRF9Z24SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9Z24SPBF
• Description: MOSFET Power P-Chan 60V 11 Amp
• Manufacturer: Vishay

Specifications of IRF9Z24SPBF

• Transistor Polarity: P-Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Voltage Vgs Max: 20V
• Transistor Case Style: D2-PAK
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Fall Time: 29 ns
• Rise Time: 68 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91091
S10-1728-Rev. B, 02-Aug-10
Vary t
required I
91091_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
91091_11
AS
15
12
9
6
3
0
25
R
- 10 V
10
g
0.1
10
-2
1
V
10
50
DS
-5
D = 0.50
0.2
0.1
0.05
0.02
0.01
T
t
C
p
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
100
0.01 Ω
L
10
-4
125
Single Pulse
(Thermal Response)
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
150
10
+
-
t
1
-3
V
175
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
0.1
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
t
p
1
j
= P
P
D.U.T.
DM
DM
R
Vishay Siliconix
x Z
D
t
t
d(off)
1
1
thJC
V
/t
DS
2
t
+ T
2
t
f
C
10
+
-
www.vishay.com
V
V
DD
DD
5