IRF9Z24SPBF Vishay, IRF9Z24SPBF Datasheet - Page 7
IRF9Z24SPBF
Manufacturer Part Number
IRF9Z24SPBF
Description
MOSFET Power P-Chan 60V 11 Amp
Manufacturer
Vishay
Specifications of IRF9Z24SPBF
Transistor Polarity
P-Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Voltage Vgs Max
20V
Transistor Case Style
D2-PAK
Threshold Voltage Vgs Typ
-4V
Rohs Compliant
Yes
Fall Time
29 ns
Rise Time
68 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91091.
Document Number: 91091
S10-1728-Rev. B, 02-Aug-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
• Compliment N-Channel of D.U.T. for driver
Note
a. V
Note
D.U.T. V
Driver gate drive
D.U.T. l
Inductor current
GS
= - 5 V for logic level and - 3 V drive devices
P.W.
SD
DS
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Ripple ≤ 5 %
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
current
SD
Diode recovery
controlled by duty factor “D”
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
dV/dt
current transformer
dI/dt
D =
-
g
Period
P.W.
+
I
V
SD
V
GS
DD
= - 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7