SIHF12N50C-E3 Vishay, SIHF12N50C-E3 Datasheet - Page 6

• Manufacturer Part Number: SIHF12N50C-E3
• Description: MOSFET Power N-Channel 500V
• Manufacturer: Vishay

Specifications of SIHF12N50C-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.46 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
www.vishay.com
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I
AS
Fig. 13a - Unclamped Inductive Test Circuit
Fig. 13b - Unclamped Inductive Waveforms
R
20 V
G
V
DS
t
p
I
AS
D.U.T.
t
0.01 Ω
p
L
V
15 V
DS
Driver
+
- V
A
DD
A
V
GS
V
G
12 V
Fig. 14a - Basic Gate Charge Waveform
V
Fig. 14b - Gate Charge Test Circuit
GS
Q
Same type as D.U.T.
GS
Current regulator
0.2 µF
Charge
Current sampling resistors
3 mA
Q
50 kΩ
Q
GD
G
0.3 µF
I
G
S10-0969-Rev. B, 26-Apr-10
Document Number: 91388
D.U.T.
I
D
+
-
V
DS