SUD50N06-09L-E3 Vishay, SUD50N06-09L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUD50N06-09L-E3
• Description: MOSFET Power 60V 50A 136W 9.3mohm @ 10V
• Manufacturer: Vishay

Specifications of SUD50N06-09L-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0093 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 8300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
Document Number: 72004
S-71660-Rev. D, 06-Aug-07
http://www.vishay.com/ppg?72004.
60
50
40
30
20
10
0
0.01 10 -
0
0.1
2
1
25
4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
T
vs. Ambient Temperature
A
0.02
Maximum Drain Current
50
- Ambient Temperature (°C)
0.05
75
10 -
3
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
10 -
2
175
Square Wave Pulse Duration (sec)
10 -
1
1000
0.01
100
0.1
10
1
0.1
*V
GS
*r
Limited
DS(on)
> minimum V
V
1
DS
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
Safe Operating Area
= 25 °C
GS
SUD50N06-09L
at which r
Vishay Siliconix
10
DS(on)
10
is specified
www.vishay.com
100
10 µs
100 µs
1 ms
10 ms
100 ms
dc
100
5