SI7137DP-T1-GE3 Vishay, SI7137DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7137DP-T1-GE3
• Description: MOSFET Power 20V 60A 104W
• Manufacturer: Vishay

Specifications of SI7137DP-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0031 Ohms
• Forward Transconductance Gfs (max / Min): 95 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si7137DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.001
0.8
0.6
0.4
0.2
0.0
0.01
100
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
T
J
J
= 150 °C
0.4
- Temperature (°C)
25
50
0.6
I
D
75
0.01
100
= 250 µA
Limited by R
0.1
10
0.8
1
0.01
T
100
J
= 25 °C
* V
I
D
GS
1.0
125
= 1 mA
DS(on)
> minimum V
V
Single Pulse
0.1
T
DS
A
*
150
= 25 °C
- Drain-to-Source Voltage (V)
1.2
Safe Operating Area
GS
at which R
1
BVDSS
DS(on)
0.010
0.008
0.006
0.004
0.002
0.000
10
200
160
120
80
40
is specified
0
0
0 .
0
On-Resistance vs. Gate-to-Source Voltage
1 ms
100 ms
1 s
10 s
DC
10 ms
0
1
Single Pulse Power, Junction-to-Ambient
1
100
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
S09-0865-Rev. D, 18-May-09
0.1
5
Document Number: 69063
6
7
1
T
T
I
J
J
D
8
= 125 °C
= 25 °C
= - 25 A
9
10
1
0