SI7137DP-T1-GE3 Vishay, SI7137DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI7137DP-T1-GE3
• Description: MOSFET Power 20V 60A 104W
• Manufacturer: Vishay

Specifications of SI7137DP-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0031 Ohms
• Forward Transconductance Gfs (max / Min): 95 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si7137DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69063.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
Duty Cycle = 0.5
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
0.2
0.1
Single Pulse
10
-3
10
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Case
0.02
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
10
-2
-1
1
10
-1
1
0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
S09-0865-Rev. D, 18-May-09
= P
t
2
DM
Document Number: 69063
100
Z
thJA
thJA
t
t
1
2
(t)
= 54 °C/W
1
0
0
1
0
0