ZXM64N02XTA Diodes Inc, ZXM64N02XTA Datasheet - Page 2

• Manufacturer Part Number: ZXM64N02XTA
• Description: MOSFET Small Signal 20V P-Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXM64N02XTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
Issue 2 - February 2008
ZXM64N02X
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
Pulsed Source Current (Body Diode)(c)
A
A
=25°C (a)
=25°C (b)
(V
GS
GS
=4.5V; T
=4.5V; T
A
A
=25°C)(b)
=70°C)(b)
2
SYMBOL
V
I
I
I
P
P
V
I
T
D
DM
S
SM
SYMBOL
R
R
D
D
j
DSS
GS
:T
JA
JA
stg
-55 to +150
VALUE
LIMIT
14.4
113
5.4
4.3
2.4
1.1
8.8
1.8
20
30
30
70
12
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
W
W
°C
V
V
A
A
A
A