ZXM64N02XTA Diodes Inc, ZXM64N02XTA Datasheet - Page 5

• Manufacturer Part Number: ZXM64N02XTA
• Description: MOSFET Small Signal 20V P-Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXM64N02XTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Issue 2 - February 2008
0.01
100
100
0.1
0.1
0.1
10
10
1
1
1
0.1
1.5
0.1
Typical Transfer Characteristics
On-Resistance v Drain Current
VDS=10V
25°C
VGS=2.0V
VGS=2.5V
VGS=4.5V
V
V
DS
Output Characteristics
GS
- Drain-Source Voltage (V)
- Gate-Source Voltage (V)
I
D
- Drain Current (A)
2
1
T=150°C
T=25°C
1
TYPICAL CHARACTERISTICS
2.5
10
100
10
3
VGS
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
5
100m
100
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
10
Source-Drain Diode Forward Voltage
1
0
1
-100
0.1
0
Normalised R
+150°C
V
V
T
-50
DS
SD
Output Characteristics
j
- Junction Temperature (°C)
- Drain-Source Voltage (V)
0.5
- Source-Drain Voltage (V)
v Temperature
0
DS(on)
ZXM64N02X
50
1
1
T=150°C
T=25°C
and V
100
1.5
150
GS(th)
VGS=4.5V
VGS=VDS
ID=250µA
ID=3.8A
VGS(th)
RDS(on)
200
10
2
VGS
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
5V