2N7002K-T1-GE3 Vishay, 2N7002K-T1-GE3 Datasheet

MOSFET Small Signal 60V 300mA 0.35W 2.0ohm @ 10V

2N7002K-T1-GE3

Manufacturer Part Number
2N7002K-T1-GE3
Description
MOSFET Small Signal 60V 300mA 0.35W 2.0ohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of 2N7002K-T1-GE3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Resistance Drain-source Rds (on)
2 Ohms
Gate Charge Qg
0.4 nC
Forward Transconductance Gfs (max / Min)
100 mS
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
300 mA
Power Dissipation
0.35 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Drain Current Id
190mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002K-T1-GE3
Manufacturer:
VISHAY
Quantity:
60 000
Part Number:
2N7002K-T1-GE3
Manufacturer:
SIX
Quantity:
9 000
Part Number:
2N7002K-T1-GE3
Manufacturer:
VISHAY
Quantity:
6 000
Part Number:
2N7002K-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
2N7002K-T1-GE3
Quantity:
99 000
Company:
Part Number:
2N7002K-T1-GE3
Quantity:
99 000
Company:
Part Number:
2N7002K-T1-GE3
Quantity:
75 000
Company:
Part Number:
2N7002K-T1-GE3
Quantity:
3 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71333
S09-0857-Rev. E, 18-May-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Ordering Information: 2N7002K-T1
V
DS
G
60
S
(V)
1
2
* Marking Code
2N7002K (7K)*
Top View
T O-236
SOT -23
b
a
2N7002K-T1-E3 (Lead (Pb)-free)
2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)
2 at V
R
DS(on)
J
GS
= 150 °C)
3
b
= 10 V
(Ω)
D
N-Channel 60-V (D-S) MOSFET
b
I
D
A
300
(mA)
= 25 °C, unless otherwise noted
T
T
T
T
FEATURES
BENEFITS
APPLICATIONS
A
A
A
A
• Halogen-free According to IEC 61249-2-21
• Low On-Resistance: 2 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET
• 2000 V ESD Protection
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
• Battery Operated Systems
• Solid-State Relays
= 100 °C
= 100 °C
= 25 °C
= 25 °C
Definition
Compliant to RoHS Directive 2002/95/EC
Memories, Transistors, etc.
®
Symbol
T
Power MOSFET
R
V
V
J,
I
P
DM
I
thJA
DS
GS
D
T
D
stg
- 55 to 150
Limit
± 20
0.35
0.14
300
190
800
350
60
Vishay Siliconix
2N7002K
www.vishay.com
°C/W
Unit
mA
°C
W
V
1

Related parts for 2N7002K-T1-GE3

2N7002K-T1-GE3 Summary of contents

Page 1

... GS T O-236 SOT - Top View 2N7002K (7K)* * Marking Code Ordering Information: 2N7002K-T1 2N7002K-T1-E3 (Lead (Pb)-free) 2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current b Power Dissipation b Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes: a ...

Page 2

... Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage a Dynamic Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... 0.0 0.1 0.2 0 Total Gate Charge (nC) g Gate Charge Document Number: 71333 S09-0857-Rev. E, 18-May- 600 800 1000 0.4 0.5 0.6 2N7002K Vishay Siliconix 1200 °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics iss 16 C oss 8 C rss 0 ...

Page 4

... Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 T = 125 ° 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0 Junction Temperature (°C) J Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 0.2 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71333. Document Number: 71333 S09-0857-Rev. E, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 2N7002K Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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