2N7002K-T1-E3 Vishay, 2N7002K-T1-E3 Datasheet

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2N7002K-T1-E3

Manufacturer Part Number
2N7002K-T1-E3
Description
N-CH ENHANCEMENT MOSFET W/ ESD PROTECT
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of 2N7002K-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
30pF @ 25V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.3 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Rohs Compliant
YES
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
7.5ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
200mW
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
2Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N7002K-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002K-T1-E3
Manufacturer:
SIX
Quantity:
177 000
Part Number:
2N7002K-T1-E3
Manufacturer:
RENESAS
Quantity:
69
Part Number:
2N7002K-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
2N7002K-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
2N7002K-T1-E3
Quantity:
70 000
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
Part Number
D Low On-Resistance: 2.5 W
D Low Threshold: 2.1 V
D Low Input Capacitance: 22 pF
D Fast Switching Speed: 7 ns
D Low Input and Output Leakage
VQ1000P
VQ1000J
2N7000
2N7002
BS170
N
N
NC
G
G
D
S
S
D
1
1
1
2
2
2
V
(BR)DSS
1
2
3
4
5
6
7
G
D
S
Sidebraze: VQ1000P
Plastic: VQ1000J
60
Dual-In-Line
TO-226AA
Min (V)
Top View
Top View
(TO-92)
2N7000
1
2
3
N-Channel 60-V (D-S) MOSFET
r
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
DS(on)
7.5 @ V
5.5 @ V
5.5 @ V
5 @ V
5 @ V
14
13
12
11
10
9
8
GS
GS
GS
GS
GS
Max (W)
D
S
G
NC
G
S
D
4
3
= 10 V
= 10 V
4
4
3
3
= 10 V
= 10 V
= 10 V
N
N
V
GS(th)
0.8 to 2.5
0.8 to 2.5
0.8 to 3
1 to 2.5
0.8 to 3
2N7000/2N7002, VQ1000J/P, BS170
(V)
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
D Battery Operated Systems
D Solid-State Relays
I
D
0.115
0.225
0.225
Displays, Memories, Transistors, etc.
0.2
0.5
(A)
G
S
G
D
S
Marking Code: 72wll
72 = Part Number Code for 2N7002
w = Week Code
ll = Lot Traceability
(TO-18 Lead Form)
1
2
TO-92-18RM
(SOT-23)
TO-236
Top View
Top View
BS170
1
2
3
Vishay Siliconix
3
D
www.vishay.com
11-1

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2N7002K-T1-E3 Summary of contents

Page 1

... D High-Speed Circuits D Low Error Voltage Vishay Siliconix I (A) D 0.2 0.115 0.225 0.225 0.5 D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-236 (SOT-23 Top View Marking Code: 72wll 72 = Part Number Code for 2N7002 ...

Page 2

... VQ1000J/P, BS170 Vishay Siliconix Parameter Drain-Source Voltage Gate-Source Voltage—Non-Repetitive Gate-Source Voltage—Continuous T = 25_C A Continuous Drain Current Continuous Drain Current (T = 150_C 100_C Pulsed Drain Current T = 25_C A Power Dissipation T = 100_C A Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. ...

Page 3

... GS C oss MHz MHz C rss 0 GEN G OFF t = 125 W = 125 0 GEN G OFF Vishay Siliconix Limits 2N7000 2N7002 a Typ Min Max Min Max Unit Limits VQ1000J/P BS170 a Typ Min Max Min Max Unit 2.1 0.8 2.5 0.8 3 "100 "500 nA "10 0 500 ...

Page 4

... VQ1000J/P, BS170 Vishay Siliconix Output Characteristics 1 10 0.8 0.6 0.4 0.2 0 – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.0 0.2 0.4 0.6 I – Drain Current (A) D Gate Charge 0 400 800 1200 Q – Total Gate Charge (pC) g www.vishay.com 11 ...

Page 5

... S-04279—Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 _ = 25_C J 1.0 1.2 1.4 Threshold Voltage 0.50 = 250 0.25 –0.00 –0.25 –0.50 –0.75 –50 – – Square Wave Pulse Duration (sec) 1 Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 500 – Gate-to-Source Voltage (V) GS 100 125 150 Notes: ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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