TN0110N3-G Supertex, TN0110N3-G Datasheet

TN0110N3-G

Manufacturer Part Number

TN0110N3-G

Description

MOSFET Small Signal 100V 3Ohm

Manufacturer

Supertex

Type

Power MOSFETr

Datasheet

1.TN0110N3-G.pdf (5 pages)

Specifications of TN0110N3-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

3 Ohm @ 10 V

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.35 A

Power Dissipation

1000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

3Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

TO-92

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

Ordering Information

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Low threshold - 2.0V max.

High input impedance

Low input capacitance - 50pF typical

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Device

TN0110

Package Option

TN0110N3-G

TO-92

●

N-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55

C to +150

300

Value

±20V

DSS

100

(V)

DGS

DSS

/BV

DGS

Pin Conﬁgurations

Product Marking

Package may or may not include the following marks: Si or

General Description

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

(max)

DS(ON)

3.0

(Ω)

Y Y W W

●

0 1 1 0

Si TN

Tel: 408-222-8888

SOURCE

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

●

(min)

D(ON)

2.0

(A)

= “Green” Packaging

www.supertex.com

DRAIN

GATE

TN0110

(max)

2.0

GS(th)

(V)

Related parts for TN0110N3-G

TN0110N3-G Summary of contents

Page 1

... General purpose line drivers ► Telecom switches Ordering Information Package Option Device TO-92 TN0110 TN0110N3-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Absolute Maximum Ratings are those values beyond which damage to the device may occur ...

Page 2

... D 6.0 7 25Ω GEN 3.0 6.0 1 PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com TN0110 I I † DR DRM (mA) (A) 350 2.0 = 1.0mA = 0.5mA = 1.0mA = Max Rating = 0.8 Max Rat- = 25V DS = 25V DS = 250mA D = 500mA D = 500mA D = 500mA D = 500mA = 500mA ...

Page 3

... Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics 10V (volts) DS Power Dissipation vs. Case Temperature 2.0 TO-92 1 100 125 T ° Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 25° 0.001 0.01 0 (seconds) p ● Tel: 408-222-8888 ● www.supertex.com TN0110 10 150 10 ...

Page 4

... DS 1 0.5mA 1.2 (th) 1 10V, 0.5A DS(ON) 0.8 0.6 0.4 - 100 Gate Drive Dynamic Characteristics 10V DS 8 55pF 40V 50pF 0 0 1.0 2.0 3.0 4.0 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com TN0110 5.0 1.4 1.2 1.0 0.8 0.6 0.4 150 5.0 ...

Page 5

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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