SIB457EDK-T1-GE3 Vishay, SIB457EDK-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIB457EDK-T1-GE3
• Description: MOSFET Small Signal 20V 9.0A 13W 35mohms @ 4.5V
• Manufacturer: Vishay

Specifications of SIB457EDK-T1-GE3

• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.029 Ohms
• Gate Charge Qg: 13 nC
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 6.8 A
• Power Dissipation: 2.4 W
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 35mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64816
S09-1497-Rev. B, 10-Aug-09
0.20
0.15
0.10
0.05
0.00
0.8
0.6
0.4
0.2
0.0
25
20
15
10
V
5
0
GS
0.0
0
0
= 1.5 V
Gate Current vs. Gate-Source Voltage
0.5
On-Resistance vs. Drain Current
3
V
5
V
DS
GS
Output Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
I
D
10
- Drain Current (A)
6
V
V
GS
GS
1.5
V
= 1.8 V
V
= 5 V thru 2.5 V
GS
GS
15
9
= 2.5 V
= 4.5 V
2.0
T
J
= 25 °C
V
V
V
GS
GS
GS
12
20
2.5
= 1.5 V
= 2 V
= 1 V
3.0
15
25
10
10
10
10
10
10
10
10
10
10
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-10
-11
10
-2
-3
-4
-5
-6
-7
-8
-9
8
6
4
2
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
T
Gate Current vs. Gate-Source Voltage
J
= 150 °C
V
3
V
GS
V
GS
V
0.5
T
GS
Transfer Characteristics
T
0
GS
C
J
= 1.8 V; I
= 4.5 V, 2.5 V; I
= 125 °C
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
T
6
C
= 25 °C
D
T
= 4.8 A
J
1.0
50
= 25 °C
Vishay Siliconix
D
V
9
= 4.8 A
SiB457EDK
GS
75
T
= 1.5 V; I
C
= - 55 °C
1.5
100
www.vishay.com
12
D
125
= 1.5 A
150
2.0
15
3