SIB457EDK-T1-GE3 Vishay, SIB457EDK-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIB457EDK-T1-GE3
• Description: MOSFET Small Signal 20V 9.0A 13W 35mohms @ 4.5V
• Manufacturer: Vishay

Specifications of SIB457EDK-T1-GE3

• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.029 Ohms
• Gate Charge Qg: 13 nC
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 6.8 A
• Power Dissipation: 2.4 W
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 35mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64816
S09-1497-Rev. B, 10-Aug-09
20
16
12
8
4
0
0
Package Limited
25
T
D
C
50
Current Derating*
is based on T
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
15
12
9
6
3
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiB457EDK
www.vishay.com
125
150
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