SI4914BDY-T1-E3 Vishay, SI4914BDY-T1-E3 Datasheet
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SI4914BDY-T1-E3
Specifications of SI4914BDY-T1-E3
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SI4914BDY-T1-E3 Summary of contents
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... Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free) Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current PulseD Source-Drain Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy ...
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... Si4914BDY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2. MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Δ ...
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... A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µs F Si4914BDY Vishay Siliconix a Min. Typ. Max. Unit Ch-2 8 ...
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... Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.05 0. 0. Drain Current (A) D On-Resistance vs. Drain Current 3.2 6 Total Gate Charge (nC) g Gate Charge www.vishay.com thru 1.5 2.0 2 9.6 12.8 16.0 2 ...
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... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area Si4914BDY Vishay Siliconix T = 125 ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 100 ms ...
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... Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.5 2.8 2.1 1.4 0 Case Temperature (°C) C Power, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Single Pulse 0. Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Single Pulse - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4914BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( ...
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... Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.040 0.034 0.028 0.022 V 0.016 0.010 Drain Current (A) D On-Resistance vs. Drain Current 3.4 6 Total Gate Charge (nC) g Gate Charge www.vishay.com 1.5 2.0 2.5 ...
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... 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si4914BDY Vishay Siliconix 0.10 0.08 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 100 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 1 ms ...
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... Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0 Case Temperature (°C) C Power, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69654. Document Number: 69654 S09-2109-Rev. E, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4914BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 115 ° ...
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