SI4914BDY-T1-E3 Vishay, SI4914BDY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4914BDY-T1-E3
• Description: MOSFET Small Signal 30V 8.4/8.0A 2.1/3.1
• Manufacturer: Vishay

Specifications of SI4914BDY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.021 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.7 A @ Channel 1 or 7.4 A @ Channel 2
• Power Dissipation: 1700 mW @ Channel 1 or 2000 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 7.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.7V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
10
10
10
10
10
10
100
0.1
10
-2
-3
-4
-5
-6
-1
1
0
0
Source-Drain Diode Forward Voltage
T
0.2
J
25
= 150 °C
V
SD
Reverse Current Schottky
- Source-to-Drain Voltage (V)
0.4
50
T
J
- Temperature (°C)
0.6
75
V
T
DS
J
Limited by R
= 25 °C
= 30 V
V
DS
0.8
100
= 10 V
0.01
100
0.1
V
10
DS
1
0.1
DS(on)
1.0
= 20 V
125
* V
Single Pulse
T
*
A
GS
= 25 °C
> minimum V
1.2
150
V
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
1
GS
at which R
0.10
0.08
0.06
0.04
0.02
10
DS(on)
100
80
60
40
20
0
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
Si4914BDY
6
www.vishay.com
T
T
1
A
A
= 125 °C
8
= 25 °C
10
1
0
9