NTE3086 NTE ELECTRONICS, NTE3086 Datasheet - Page 2

• Manufacturer Part Number: NTE3086
• Description: Replacement Semiconductors DIP-8 NPN OPTOISOLTR
• Manufacturer: NTE ELECTRONICS

Specifications of NTE3086

• Optocoupler Output Type: Transistor
• No. Of Pins: 8
• C-e Breakdown Voltage: 30V
• Dc Current Gain Hfe: 5
• Mounting Type: Through Hole
• Dc Collector Current: 0.002A
• Isolation Voltage: 7500Vrms
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics (Cont’d): (T
Note 1. The frequency at which I
Phototransistor Detector
Collector–Emitter Breakdown Voltage
Emitter–Collector Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Leakage Current
Collector–Emitter Capacitance
Coupled Electrical Characteristics
Collector–Emitter Saturation Voltage
DC Current Transfer Ratio
Isolation Voltage
Isolation Resistance
Input to Output Capacitance
Bandwidth
Switching Times
Non–Saturated Rise Time, Fall Time
Non–Saturated Rise Time, Fall Time
Saturated Turn–On Time
Saturated Turn–Off Time
(From 5V to 0.8V)
(From Saturation to 2V)
Parameter
Cathode
Cathode
Anode
Anode
C
is 3dB down from the 1kHz value.
V
V
V
V
1
2
3
4
Symbol
V
(BR)CEO
(BR)ECO
(BR)CBO
(BR)(I–O)
t
t
R
on(sat)
I
CTR
off(sat)
CE(sat)
C
BW
CEO
t
t
(I–O)
r
r
, t
, t
CE
A
f
f
= +25 C unless otherwise specified)
I
I
I
V
V
I
V
t = 1sec
V
f = 1MHz
I
V
Note 1
V
Note 1
R
R
C
E
C
C
C
CC
CC
CE
CE
CE
I–O
L
L
= 100 A, I
= 100 A, I
= 10 A, I
= 2mA, I
= 2mA, V
= 2k , I
= 2k , I
= 10V, I
= 10V, I
= 10V, I
= 0, I
= 10V, I
= 500V
Test Conditions
F
F
F
F
= 0
F
C
C
CC
F
F
= 16mA
F
= 40mA
= 40mA
F
= 0
= 2mA, R
= 2mA, R
= 0
= 10mA
= 0
= 0
= 10V, R
8
7
6
5
Emitter
Collector
Collector
Emitter
L
L
L
= 100 ,
= 1k ,
= 100
1500 2500
10
Min
30
80
20
6
–
–
–
–
–
–
–
–
–
11
10
Typ
150
0.2
0.4
2.4
85
13
50
15
25
–
5
8
5
12
Max
100
0.4
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
kHz
nA
pF
pF
%
V
V
V
V
V
s
s
s
s