NTE30 NTE ELECTRONICS, NTE30 Datasheet
NTE30
Manufacturer Part Number
NTE30
Description
Transistor
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE30.pdf
(2 pages)
Specifications of NTE30
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
80V
Transition Frequency Typ Ft
2MHz
Operating Temperature Range
-65°C To +200°C
No. Of Pins
3
Continuous Collector Current Ic
50A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Description:
The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed
for use in high power amplifier and switching circuit applications.
Features:
D High Current Capability: I
D DC Current Gain: h
D Low Collector-Emitter Saturation Voltage: V
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
Collector-Base Voltage, V
Emitter-Base Voltage, V
Continuous Collector Current, I
Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction-to-Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25°C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
Silicon Complementary Transistors
EB
High Power, High Current Switch
= 15 to 60 @ I
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE29 (NPN) & NTE30 (PNP)
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
C
= 50A (Continuous)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
CEO(sus)
I
I
I
I
CEO
CBO
EBO
CEX
C
D
= 25A
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
T
V
V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
CE
CE
CE
CB
BE
CE(sat)
= 0.2A, I
= +150°C
= 40V, I
= 80V, V
= 80V, V
= 80V, I
= 5V, I
Test Conditions
= 1V Max @ I
C
B
B
E
= 0, Note 1
= 0
EB(off)
EB(off)
= 0
= 0
= 1.5V
= 1.5V,
C
= 25A
Min Typ
80
-
-
-
-
-
-
-
-
-
-
-
-65° to +200°C
-65° to +200°C
Max Unit
1.715W/°C
0.584°C/W
10
-
1
2
2
5
300W
mA
mA
mA
mA
mA
80V
80V
50A
15A
V
5V
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NTE30 Summary of contents
Page 1
... Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: D High Current Capability Current Gain Low Collector-Emitter Saturation Voltage: V ...
Page 2
Parameter ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Small-Signal Current Gain Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. .350 ...