NTE30 NTE ELECTRONICS, NTE30 Datasheet - Page 2
NTE30
Manufacturer Part Number
NTE30
Description
Transistor
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE30.pdf
(2 pages)
Specifications of NTE30
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
80V
Transition Frequency Typ Ft
2MHz
Operating Temperature Range
-65°C To +200°C
No. Of Pins
3
Continuous Collector Current Ic
50A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
ON Characteristics (Note 1)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Dynamic Characteristics
Current Gain-Bandwidth Product
Output Capacitance
Small-Signal Current Gain
.350 (8.89)
Parameter
.215 (5.45)
(10.92)
.430
.312 (7.93) Min
Emitter
.135 (3.45) Max
Base
Symbol
V
V
V
CE(sat)
BE(sat)
BE(on)
h
C
h
f
FE
C
T
ob
fe
1.187 (30.16)
.875 (22.2)
Dia Max
I
I
I
I
I
I
I
V
I
C
C
C
C
C
C
C
C
CB
Collector/Case
= 25A, V
= 50A, V
= 25A, I
= 50A, I
= 25A, I
= 25A, V
= 5A, V
= 10A, V
= 10V, I
(16.9)
.665
.063 (1.6) Max
Test Conditions
CE
B
B
B
CE
CE
CE
CE
.525 (13.35) R Max
= 2.5A
= 10A
= 2.5A
E
= 10V, f = 1MHz
= 0, f = 0.1MHz
= 2V
= 5V
= 2V
= 5V, f = 1kHz
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Seating
Plane
Min Typ
15
15
5
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
1200
Max Unit
60
-
1
5
2
2
-
-
MHz
pF
V
V
V
V