NTE473 NTE ELECTRONICS, NTE473 Datasheet - Page 2

• Manufacturer Part Number: NTE473
• Description: Replacement Semiconductors TO-39 NPN RF PWR DRV
• Manufacturer: NTE ELECTRONICS

Specifications of NTE473

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• Transition Frequency Typ Ft: 500MHz
• Power Dissipation Pd: 175W
• Dc Collector Current: 20A
• Dc Current Gain Hfe: 60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics (Cont’d): (T
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Dynamic Characteristics
Current Gain – Bandwidth Product
Output Capacitance
Functional Tests
Power Input
Common–Emitter Amplifier Power Gain
Collector Efficiency
Parameter
Emitter
.500 (12.7)
.260 (6.6)
Max
Min
Symbol
V
CE(sat)
h
C
G
P
f
FE
T
ob
pe
in
45
A
= +25 C unless otherwise specified)
I
I
I
V
V
C
C
C
CB
CE
= 250mA, V
= 250mA, I
= 100mA, V
.031 (.793)
= 30V, I
= 28V, P
Test Conditions
E
out
B
= 0, f = 100kHz
CE
CE
= 50mA
= 2.5W, f = 175MHz
.018 (0.45) Dia
= 5V
= 28V, f = 100MHz
Base
Collector/Case
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Min
10
10
50
–
–
–
–
Typ
500
8.0
–
–
–
–
–
Max
10.0
0.25
1.0
–
–
–
–
Unit
MHz
pF
dB
W
%
V