NTE6409 NTE ELECTRONICS, NTE6409 Datasheet
NTE6409
Manufacturer Part Number
NTE6409
Description
Replacement Semiconductors TO-18 UNIJUNCT TRANS
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE6409.pdf
(2 pages)
Specifications of NTE6409
Repetitive Peak Forward Current Itrm
2A
Peak Emitter Current
1µA
Valley Current Iv
10mA
Power Dissipation Pd
300mW
Operating Temperature Range
-65°C To +125°C
No. Of Pins
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 2 A Max
D Low Emitter Reverse Current: 200nA Max
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (T
Power Dissipation (Note 1), P
RMS Emitter Current, I
Peak Pulse Emitter Current (Note 2), i
Emitter Reverse Voltage, V
Interbase Voltage, V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. Derate 3mW/ C increase in ambient temperature. The total power dissipation (available
Note 2. Capacitor discharge: 10 F or less, 30V or less
power to Emitter and Base–Two) must be limited by the external circuitry.
B2B1
E(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B2E
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Unijunction Transistor
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, unless otherwise specified)
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
NTE6409
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65 to +125 C
–65 to +150 C
300mW
50mA
30V
35V
2A
Related parts for NTE6409
NTE6409 Summary of contents
Page 1
... Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current Max D Low Emitter Reverse Current: 200nA Max D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (T Power Dissipation (Note 1), P RMS Emitter Current, I ...
Page 2
Electrical Characteristics: (T Parameter Intrinsic Standoff Ratio Interbase Resistance Interbase Resistance Temperature Coefficient Emitter Saturation Voltage Modulated Interbase Current I Emitter Reverse Current Peak Point Emitter Current Valley Point Current Base–One Peak Pulse Voltage Note 3. Intrinsic Standoff Ratio, , ...