PSMN030-60YS,115 NXP Semiconductors, PSMN030-60YS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN030-60YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN030-60YS,115

• Input Capacitance (ciss) @ Vds: 686pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 49.6 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 21 A
• Power Dissipation: 56 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5584-2

NXP Semiconductors
PSMN030-60YS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
DSon
V
(V)
GS
70
50
30
10
10
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
12V
V
5
GS
(V) = 4.5
48V
10
10
I
D
(A)
V
Q
All information provided in this document is subject to legal disclaimers.
DS
003aae125
003aae123
G
(nC)
5
= 30V
5.5
6.5
10
6
8
Rev. 02 — 25 October 2010
20
15
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN030-60YS
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
© NXP B.V. 2010. All rights reserved.
DS
003aaa508
003aae122
(V)
C
C
C
oss
rss
iss
10
2
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