PSMN3R3-40YS,115 NXP Semiconductors, PSMN3R3-40YS,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN3R3-40YS,115
• Description: MOSFET N-CH 40V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-40YS,115

• Input Capacitance (ciss) @ Vds: 2754pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 97 A, 100 A
• Power Dissipation: 117 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5590-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R3-40YS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
δ = 0.5
0.02
Thermal characteristics
0.1
0.05
single shot
0.2
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 04 — 25 October 2010
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
10
Conditions
see
-3
Figure 4
10
-2
PSMN3R3-40YS
Min
-
10
P
-1
t
Typ
0.54
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aae210
δ =
Max
1.28
t
T
p
t
1
Unit
K/W
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