PSMN3R3-40YS,115 NXP Semiconductors, PSMN3R3-40YS,115 Datasheet - Page 5
![MOSFET N-CH 40V LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN3R3-40YS,115
Manufacturer Part Number
PSMN3R3-40YS,115
Description
MOSFET N-CH 40V LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN3R3-40YS115.pdf
(15 pages)
Specifications of PSMN3R3-40YS,115
Input Capacitance (ciss) @ Vds
2754pF @ 20V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
49nC @ 10V
Power - Max
117W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.3 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
97 A, 100 A
Power Dissipation
117 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5590-2
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R3-40YS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
δ = 0.5
0.02
Thermal characteristics
0.1
0.05
single shot
0.2
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 04 — 25 October 2010
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
10
Conditions
see
-3
Figure 4
10
-2
PSMN3R3-40YS
Min
-
10
P
-1
t
Typ
0.54
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aae210
δ =
Max
1.28
t
T
p
t
1
Unit
K/W
5 of 15