PSMN7R0-60YS,115 NXP Semiconductors, PSMN7R0-60YS,115 Datasheet - Page 2
![MOSFET N-CH 60V LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN7R0-60YS,115
Manufacturer Part Number
PSMN7R0-60YS,115
Description
MOSFET N-CH 60V LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN7R0-60YS115.pdf
(15 pages)
Specifications of PSMN7R0-60YS,115
Input Capacitance (ciss) @ Vds
2712pF @ 30V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.4 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
89A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
45nC @ 10V
Power - Max
117W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9.3 mOhms
Drain-source Breakdown Voltage
54 V
Continuous Drain Current
63 A
Power Dissipation
117 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5596-2
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN7R0-60YS_2
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN7R0-60YS
Symbol
S
S
S
G
D
Pinning information
Ordering information
LFPAK
Package
Name
Description
source
source
source
gate
mounting base; connected to
drain
Table 1.
Symbol Parameter
Static characteristics
R
DSon
plastic single-ended surface-mounted package (LFPAK); 4 leads
drain-source
on-state resistance
Description
Quick reference
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
…continued
Conditions
V
T
V
T
j
j
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
GS
GS
= 100 °C; see
= 25 °C; see
Simplified outline
= 10 V; I
= 10 V; I
SOT669 (LFPAK)
D
D
1 2 3 4
= 15 A;
= 15 A;
Figure 13
Figure 12
mb
PSMN7R0-60YS
Graphic symbol
Min
-
-
Typ
-
4.95
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
10.2
6.4
Version
SOT669
D
S
Unit
mΩ
mΩ
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