IRF9332PBF International Rectifier, IRF9332PBF Datasheet - Page 3
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IRF9332PBF
Manufacturer Part Number
IRF9332PBF
Description
MOSFET P-CH 30V 9.8A 8SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9332TRPBF.pdf
(8 pages)
Specifications of IRF9332PBF
Input Capacitance (ciss) @ Vds
1270pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.5 mOhm @ 9.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.8A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
13600µohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
28.1 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 9.8 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9332PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
10000
0.01
1000
100
100
0.1
100
Fig 3. Typical Transfer Characteristics
0.1
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
1
1
T J = 150°C
C rss
-2.5V
C iss
-V DS , Drain-to-Source Voltage (V)
C oss
-V GS , Gate-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2
1
3
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 KHZ
V DS = -10V
≤60µs PULSE WIDTH
10
4
10
TOP
BOTTOM
5
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.5V
100
100
6
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
100
0.1
14.0
12.0
10.0
10
1.6
1.4
1.2
1.0
0.8
0.6
8.0
6.0
4.0
2.0
0.0
Fig 2. Typical Output Characteristics
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = -9.8A
V GS = -10V
I D = -7.8A
-2.5V
-V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
V DS = -24V
V DS = -15V
V DS = -6.0V
10
1
≤ 60µs PULSE WIDTH
Tj = 150°C
20
10
TOP
BOTTOM
30
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.5V
100
40
3