IRF9332PBF International Rectifier, IRF9332PBF Datasheet - Page 4
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IRF9332PBF
Manufacturer Part Number
IRF9332PBF
Description
MOSFET P-CH 30V 9.8A 8SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9332TRPBF.pdf
(8 pages)
Specifications of IRF9332PBF
Input Capacitance (ciss) @ Vds
1270pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.5 mOhm @ 9.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.8A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
13600µohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
28.1 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 9.8 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9332PBF
Manufacturer:
IR
Quantity:
20 000
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
1.0
10
10
8
6
4
2
0
0.001
Fig 9. Maximum Drain Current vs.
0.3
0.01
25
100
0.1
10
1E-006
1
T J = 150°C
-V SD , Source-to-Drain Voltage (V)
Ambient Temperature
0.5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T A , Ambient Temperature (°C)
50
D = 0.50
0.02
0.05
0.01
0.20
0.10
1E-005
0.7
75
SINGLE PULSE
( THERMAL RESPONSE )
T J = 25°C
0.9
100
0.0001
V GS = 0V
1.1
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
1.3
0.01
1000
0.01
Fig 10. Threshold Voltage vs. Temperature
100
0.1
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1
Fig 8. Maximum Safe Operating Area
0.01
-75 -50 -25
0.1
T A = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R DS (on)
-V DS , Drain-to-Source Voltage (V)
0.1
I D = -25µA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
DC
T J , Temperature ( °C )
0
1
1
25
50
10
10
75 100 125 150
100µsec
10msec
1msec
100
www.irf.com
100
1000