AUIRF7640S2TR International Rectifier, AUIRF7640S2TR Datasheet - Page 4

• Manufacturer Part Number: AUIRF7640S2TR
• Description: MOSFET N-CH 60V 77A DIRECTFET-S2
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7640S2TR

• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Power - Max: 2.4W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2.4 W
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 3. Typical On-Resistance vs. Gate Voltage
4
Fig 5. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
0.001
0.01
0.01
100
100
100
0.1
0.1
10
10
80
60
40
20
1
1
0
0.1
2
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
TOP
BOTTOM
V GS, Gate -to -Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
6
1
V DS = 25V
≤60μs PULSE WIDTH
8
≤60μs
Tj = 25°C
T J = -40°C
TJ = 25°C
TJ = 175°C
10
PULSE WIDTH
10
T J = 25°C
T J = 125°C
I D = 13A
12
100
14
Fig 6. Normalized On-Resistance vs. Temperature
Fig 4. Typical On-Resistance vs. Drain Current
100
100
0.1
2.5
2.0
1.5
1.0
0.5
10
80
60
40
20
1
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
TOP
BOTTOM
I D = 13A
V GS = 10V
Fig 2. Typical Output Characteristics
Vgs = 10V
V DS , Drain-to-Source Voltage (V)
10
T J , Junction Temperature (°C)
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
I D , Drain Current (A)
1
5.0V
20
≤60μs
Tj = 175°C
30
T J = 125°C
PULSE WIDTH
10
T J = 25°C
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40
100
50