AUIRF7640S2TR International Rectifier, AUIRF7640S2TR Datasheet - Page 5
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AUIRF7640S2TR
Manufacturer Part Number
AUIRF7640S2TR
Description
MOSFET N-CH 60V 77A DIRECTFET-S2
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF7640S2TR.pdf
(11 pages)
Specifications of AUIRF7640S2TR
Input Capacitance (ciss) @ Vds
450pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
77A
Vgs(th) (max) @ Id
5V @ 25µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Power - Max
2.4W
Mounting Type
*
Package / Case
*
Configuration
Single Quad Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
36 mOhms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.8 A
Power Dissipation
2.4 W
Gate Charge Qg
7.3 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 9. Typical Forward Transconductance Vs. Drain Current
www.irf.com
6.5
5.5
4.5
3.5
2.5
1.5
18
16
14
12
10
14
12
10
8
6
4
2
0
8
6
4
2
0
-75 -50 -25 0
0
0
I D = 13A
I D = 25μA
ID = 250μA
ID = 1.0mA
D = 1.0A
4
I D ,Drain-to-Source Current (A)
2
Q G , Total Gate Charge (nC)
T J , Temperature ( °C )
8
V DS = 80V
V DS = 50V
VDS= 20V
25 50 75 100 125 150 175
4
V DS = 5.0V
380μs PULSE WIDTH
12
T J = 25°C
6
16
T J = 175°C
8
20
24
10
Fig 12. Maximum Drain Current vs. Case Temperature
10000
Fig 8. Typical Source-Drain Diode Forward Voltage
1000
100
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
100
0.1
10
24
20
16
12
10
1
8
4
0
0.2
25
1
T J = -40°C
TJ = 25°C
TJ = 175°C
50
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
T C , Case Temperature (°C)
75
0.6
100
f = 1 MHZ
10
C oss
C rss
C iss
0.8
125
V GS = 0V
1.0
150
175
1.2
100
5