IRLR3636TRLPBF International Rectifier, IRLR3636TRLPBF Datasheet - Page 7
![MOSFET N-CH 60V 50A DPAK](/photos/19/10/191032/4243240_sml.jpg)
IRLR3636TRLPBF
Manufacturer Part Number
IRLR3636TRLPBF
Description
MOSFET N-CH 60V 50A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR3636TRPBF.pdf
(10 pages)
Specifications of IRLR3636TRLPBF
Input Capacitance (ciss) @ Vds
3779pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mohm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
49nC @ 4.5V
Power - Max
143W
Mounting Type
*
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
99A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5.4mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit
+
-
12V
V
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
D.U.T
Current Regulator
.2µF
≤ 0.1 %
≤ 1
t p
50KΩ
3mA
Fig 21.
Current Sampling Resistors
I AS
D.U.T
.3µF
+
-
•
•
•
•
0.01 Ω
L
I
G
SD
•
•
•
D.U.T.
I
D
15V
-
+
-
V
G
HEXFET
DRIVER
DS
+
-
+
V DD
+
-
A
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
90%
10%
V
Fig 22b. Unclamped Inductive Waveforms
DS
GS
Fig 23b. Switching Time Waveforms
P.W.
SD
DS
I
Fig 24b. Gate Charge Waveform
AS
Vgs(th)
Waveform
Qgs1 Qgs2
Waveform
Vds
for N-Channel
Ripple ≤ 5%
Body Diode
t
Period
d(on)
Body Diode Forward
Diode Recovery
Current
Qgd
t
dv/dt
Forward Drop
r
t p
di/dt
Qgodr
D =
Period
P.W.
IRLR/U3636PbF
V
(BR)DSS
t
V
V
I
d(off)
SD
GS
DD
Vgs
=10V
Id
t
f
7