IRLR3636TRLPBF International Rectifier, IRLR3636TRLPBF Datasheet - Page 8

• Manufacturer Part Number: IRLR3636TRLPBF
• Description: MOSFET N-CH 60V 50A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3636TRLPBF

• Input Capacitance (ciss) @ Vds: 3779pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mohm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 4.5V
• Power - Max: 143W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 99A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 5.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U3636PbF
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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