BLF7G27LS-150P,112 NXP Semiconductors, BLF7G27LS-150P,112 Datasheet - Page 11
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BLF7G27LS-150P,112
Manufacturer Part Number
BLF7G27LS-150P,112
Description
TRANS LDMOS SOT539B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G27L-150P118.pdf
(14 pages)
Specifications of BLF7G27LS-150P,112
Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
2.5GHz ~ 2.7GHz
Gain
16.5dB
Current Rating
37A
Current - Test
1.2A
Voltage - Test
28V
Power - Output
30W
Package / Case
*
Configuration
Single
Drain-source Breakdown Voltage
65 V
Continuous Drain Current
37 A
Maximum Operating Temperature
+ 225 C
Forward Transconductance Gfs (max / Min)
0.86 S
Resistance Drain-source Rds (on)
0.14 Ohms
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G27L-150P_7G27LS-150P
Product data sheet
Document ID
BLF7G27L-150P_7G27LS-150P v.1
Revision history
Table 8.
Acronym
CCDF
CW
IS-95
ESD
LDMOS
LDMOST
N-CDMA
PAR
RF
VSWR
W-CDMA
Abbreviations
BLF7G27L-150P; BLF7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Description
Complementary Cumulative Distribution Function
Continuous Wave
Interim Standard 95
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
20101112
Release date
Rev. 1 — 12 November 2010
Data sheet status
Product data sheet
Change notice
-
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
Supersedes
-
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