MRF8S18260HSR6 Freescale Semiconductor, MRF8S18260HSR6 Datasheet - Page 2

• Manufacturer Part Number: MRF8S18260HSR6
• Description: MOSFET RF N-CH 260W NI1230S-8
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S18260HSR6

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 1.81GHz
• Gain: 17.9dB
• Current - Test: 1.6A
• Voltage - Test: 30V
• Power - Output: 74W
• Package / Case: SOT-1110B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

2
MRF8S18260HR6 MRF8S18260HSR6
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth
@ ±5 MHz Offset.
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Gates (Pins 2, 3) and drains (Pins 6, 7) are connected internally.
2. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
DD
GS
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 30 Vdc, I
= 30 Vdc, I
= 10 Vdc, I
(1,2)
DS
D
D
D
D
(1)
(1)
GS
GS
= 400 μAdc)
= 1600 mA)
= 1600 mA, Measured in Functional Test)
= 4 Adc)
(In Freescale Test Fixture, 50 ohm system) V
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Characteristic
Frequency
1805 MHz
1840 MHz
1880 MHz
Test Methodology
(T
A
= 25°C unless otherwise noted)
DD
= 30 Vdc, I
Symbol
V
V
V
V
ACPR
DD
I
I
I
DS(on)
PAR
(dB)
17.9
17.9
17.9
GS(th)
GG(Q)
G
GS(Q)
G
IRL
DSS
DSS
GSS
η
DQ
ps
ps
D
= 30 Vdc, I
= 1600 mA, P
16.8
29.0
DQ
31.6
31.9
32.5
Min
(%)
1.1
4.3
0.1
5.4
η
—
—
—
—
—
—
D
= 1600 mA, P
out
= 74 W Avg., f = 1805 MHz,
Output PAR
--35.0
0.15
17.9
31.6
(dB)
Typ
--19
1.9
2.6
5.1
6.0
6.0
6.0
5.9
—
—
—
IV (Minimum)
A (Minimum)
2 (Minimum)
out
Class
= 74 W Avg., Single--Carrier
Freescale Semiconductor
ACPR
--32.0
(dBc)
--35.0
--36.0
--36.0
Max
19.0
2.6
5.8
0.3
10
--7
—
—
—
1
1
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
(dB)
Vdc
Vdc
Vdc
Vdc
dBc
IRL
--19
--18
dB
dB
dB
--8
%