MRF8S18260HSR6 Freescale Semiconductor, MRF8S18260HSR6 Datasheet - Page 6

• Manufacturer Part Number: MRF8S18260HSR6
• Description: MOSFET RF N-CH 260W NI1230S-8
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S18260HSR6

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 1.81GHz
• Gain: 17.9dB
• Current - Test: 1.6A
• Voltage - Test: 30V
• Power - Output: 74W
• Package / Case: SOT-1110B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

6
MRF8S18260HR6 MRF8S18260HSR6
0.0001
0.001
0.01
100
0.1
10
1
0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
1
Figure 8. CCDF W- -CDMA IQ Magnitude
Clipping, Single- -Carrier Test Signal
2
3
PEAK--TO--AVERAGE (dB)
Input Signal
4
19
18
17
16
15
14
13
24
20
16
12
Figure 6. Single- -Carrier W- -CDMA Power Gain, Drain
5
8
4
0
1400
1
V
W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
1805 MHz
DD
Efficiency and ACPR versus Output Power
6
Figure 7. Broadband Frequency Response
= 30 Vdc, I
1500
1840 MHz
7
TYPICAL CHARACTERISTICS
V
P
I
DQ
DD
in
1600
P
= 0 dBm
= 1600 mA
W- -CDMA TEST SIGNAL
1805 MHz
DQ
= 30 Vdc
out
8
, OUTPUT POWER (WATTS) AVG.
= 1600 mA, Single--Carrier
1700
1840 MHz
f, FREQUENCY (MHz)
9
1880 MHz
1880 MHz
10
Gain
IRL
10
1800
1805 MHz
1900
G
--100
ps
--10
--20
--30
--40
--50
--60
--70
--80
--90
10
1840 MHz
0
--9
2000
Figure 9. Single- -Carrier W- -CDMA Spectrum
--ACPR in 3.84 MHz
--7.2
ACPR
100
1880 MHz
Integrated BW
2100
--5.4
η
D
300
2200
--3.6
10
5
0
--5
--10
--15
--20
60
50
40
30
20
10
0
f, FREQUENCY (MHz)
--1.8
Channel BW
3.84 MHz
0
0
--10
--20
--30
--40
--50
--60
Freescale Semiconductor
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
RF Device Data
5.4
7.2
9