BFG540W/XR,135 NXP Semiconductors, BFG540W/XR,135 Datasheet - Page 5

• Manufacturer Part Number: BFG540W/XR,135
• Description: TRANS RF NPN 9GHZ 15V SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/XR,135

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5821-2; BFG540W/XR,135

NXP Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
Fig.4
f = 1 GHz; T
Fig.6
(GHz)
CE
f
h FE
250
200
150
100
T
= 8 V.
50
12
0
10
8
4
0
10
−2
DC current gain as a function of
Transition frequency as a function of
collector current; typical values.
collector current; typical values.
1
amb
= 25 C.
10
−1
1
1
10
10
I
C
V
V
I C (mA)
CE
CE
(mA)
MRA749
MLC044
= 8 V
= 4 V
10
10
2
2
5
handbook, halfpage
Fig.5
I
C
(pF)
C re
= 0; f = 1 MHz.
0.8
0.6
0.4
0.2
1
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
BFG540W/X; BFG540W/XR
4
8
Product specification
V CB (V)
BFG540W
MRA750
12