BFG540/XR,215 NXP Semiconductors, BFG540/XR,215 Datasheet

TRANS NPN 15V 9GHZ SOT143B REV

BFG540/XR,215

Manufacturer Part Number
BFG540/XR,215
Description
TRANS NPN 15V 9GHZ SOT143B REV
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG540/XR,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Mounting Type
Surface Mount
Power - Max
400mW
Current - Collector (ic) (max)
120mA
Voltage - Collector Emitter Breakdown (max)
15V
Gain
15dB ~ 16dB
Transistor Type
NPN
Frequency - Transition
9GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 40mA, 8V
Noise Figure (db Typ @ F)
1.3dB ~ 1.8dB @ 900MHz
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
400 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q4360770
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BFG540; BFG540/X; BFG540/XR
NPN 9 GHz wideband transistor
Rev. 05 — 21 November 2007
IMPORTANT NOTICE
Product data sheet

Related parts for BFG540/XR,215

BFG540/XR,215 Summary of contents

Page 1

... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...

Page 2

... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc ...

Page 3

... NXP Semiconductors NPN 9 GHz wideband transistor QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES I DC collector current C P total power dissipation tot h DC current gain FE C feedback capacitance re f transition frequency T G maximum unilateral power gain UM insertion power gain ...

Page 4

... NXP Semiconductors NPN 9 GHz wideband transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C emitter capacitance e C collector capacitance c C feedback capacitance re f transition frequency T G maximum unilateral power gain UM (note 1) insertion power gain ...

Page 5

... NXP Semiconductors NPN 9 GHz wideband transistor 600 handbook, halfpage P tot (mW) 400 200 100 Fig.3 Power derating curve. 1 handbook, halfpage C re (pF) 0.8 0.6 0.4 0 MHz. C Fig.5 Feedback capacitance as a function of collector-base voltage. MBG249 handbook, halfpage h FE 150 200 Fig.4 MRA750 handbook, halfpage ...

Page 6

... NXP Semiconductors NPN 9 GHz wideband transistor 25 handbook, halfpage gain (dB) MSG 900 MHz. CE MSG = maximum stable gain maximum available gain; max G = maximum unilateral power gain. UM Fig.7 Gain as a function of collector current. 50 handbook, halfpage gain (dB MSG mA maximum unilateral power gain; UM MSG = maximum stable gain maximum available gain ...

Page 7

... NXP Semiconductors NPN 9 GHz wideband transistor 20 handbook, halfpage d im (dB Fig.11 Intermodulation distortion as a function of collector current. 5 handbook, halfpage F min (dB ass 3 2000 MHz 2 F min 1000 MHz 900 MHz 500 MHz Fig.13 Minimum noise figure and associated available gain as functions of collector current. ...

Page 8

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 mA 900 MHz handbook, full pagewidth 180 mA GHz 135 0.5 0.2 F min = 1.3 dB OPT 0 0.5 135 1 90 Fig.15 Noise circle figure 135 0 max = 11 0.2 0 OPT F min = 2 0.5 135 ...

Page 9

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 mA Fig.17 Common emitter input reflection coefficient (s handbook, full pagewidth 180 mA Fig.18 Common emitter forward transmission coefficient ( 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 135 135 40 MHz 3 GHz 135 90 Rev November 2007 Product specifi ...

Page 10

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 0. mA Fig.19 Common emitter reverse transmission coefficient (s handbook, full pagewidth 180 mA Fig.20 Common emitter output reflection coefficient (s 90 135 3 GHz 40 MHz 0.20 0.15 0.10 0.05 135 135 0.5 0.2 0.2 0.5 ...

Page 11

... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...

Page 12

... NXP Semiconductors NPN 9 GHz wideband transistor Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors Revision history Revision history Document ID Release date BFG540_X_XR_N_5 20071121 • Modifications: Pinning table on page 2; changed code BFG540_X_XR_4 20000523 (9397 750 07059) BFG540XR_3 19950901 (9397 750 03144) BFG540XR_2 - BFG540XR_1 - BFG540; BFG540/X; BFG540/XR Data sheet status Change notice Product data sheet - Product specifi ...

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