BFG540/XR,215 NXP Semiconductors, BFG540/XR,215 Datasheet - Page 2

• Manufacturer Part Number: BFG540/XR,215
• Description: TRANS NPN 15V 9GHZ SOT143B REV
• Manufacturer: NXP Semiconductors

Specifications of BFG540/XR,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Type: Surface Mount
• Power - Max: 400mW
• Current - Collector (ic) (max): 120mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Gain: 15dB ~ 16dB
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 900MHz
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4360770

NXP Semiconductors
FEATURES
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optical systems.
The transistors are mounted in plastic
SOT143B and SOT143R packages.
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
NPN 9 GHz wideband transistor
PINNING
BFG540 (Fig.1) Code: %MG
1
2
3
4
BFG540/X (Fig.1) Code: %MM
1
2
3
4
BFG540/XR (Fig.2) Code: %MR
1
2
3
4
PIN
Rev. 05 - 21 November 2007
collector
base
emitter
emitter
collector
emitter
base
emitter
collector
emitter
base
emitter
DESCRIPTION
handbook, 2 columns
handbook, 2 columns
BFG540; BFG540/X;
Top view
4
1
3
2
Top view
Fig.1 SOT143B.
Fig.2 SOT143R.
Product specification
BFG540/XR
MSB014
MSB035
3
2
4
1
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