BFG10,215 NXP Semiconductors, BFG10,215 Datasheet - Page 11
![TRANS RF NPN 2GHZ 8V SOT143](/photos/5/30/53004/568-sot-143b_sml.jpg)
BFG10,215
Manufacturer Part Number
BFG10,215
Description
TRANS RF NPN 2GHZ 8V SOT143
Manufacturer
NXP Semiconductors
Datasheet
1.BFG10X215.pdf
(11 pages)
Specifications of BFG10,215
Package / Case
TO-253-4, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
8V
Frequency - Transition
1.9GHz
Gain
7dB
Power - Max
400mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 50mA, 5V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
25
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
8 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
250 mA
Power Dissipation
400 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-6183-2
BFG10,215
BFG10,215
NXP Semiconductors
Revision history
Revision history
Document ID
BFG10X_N_5
Modifications:
BFG10X_4
BFG10X_3
BFG10X_2
BFG10X_1
Release date
20071122
19950831
19950307
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Marking table on page 2; changed code
Data sheet status
Product data sheet
Product specification
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Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Change notice
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BFG10; BFG10/X
NPN 2 GHz RF power transistor
Supersedes
BFG10X_4
BFG10X_3
BFG10X_2
BFG10X_1
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Date of release: 22 November 2007
Document identifier: BFG10X_N_5
All rights reserved.