BFG10,215 NXP Semiconductors, BFG10,215 Datasheet - Page 11

• Manufacturer Part Number: BFG10,215
• Description: TRANS RF NPN 2GHZ 8V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG10,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 1.9GHz
• Gain: 7dB
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6183-2; BFG10,215

NXP Semiconductors
Revision history
Revision history
Document ID
BFG10X_N_5
Modifications:
BFG10X_4
BFG10X_3
BFG10X_2
BFG10X_1
Release date
20071122
19950831
19950307
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Marking table on page 2; changed code
Data sheet status
Product data sheet
Product specification
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Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Change notice
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BFG10; BFG10/X
NPN 2 GHz RF power transistor
Supersedes
BFG10X_4
BFG10X_3
BFG10X_2
BFG10X_1
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Date of release: 22 November 2007
Document identifier: BFG10X_N_5
All rights reserved.