BFG10/X,215 NXP Semiconductors, BFG10/X,215 Datasheet
BFG10/X,215
Specifications of BFG10/X,215
BFG10/X,215
Related parts for BFG10/X,215
BFG10/X,215 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors NPN 2 GHz RF power transistor FEATURES High power gain High efficiency Small size discrete power amplifier 1.9 GHz operating area Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package ...
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... NXP Semiconductors NPN 2 GHz RF power transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th j-s soldering point Note the temperature at the soldering point of the collector pin. s CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage ...
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... NXP Semiconductors NPN 2 GHz RF power transistor APPLICATION INFORMATION RF performance common-emitter test circuit (see Fig.7). amb MODE OF OPERATION Pulsed, class-AB, duty cycle: < Ruggedness in class-AB operation The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = through all phases, at rated output power under pulsed conditions supply voltage 1.9 GHz and a duty cycle ...
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... NXP Semiconductors NPN 2 GHz RF power transistor SPICE parameters for the BFG10 crystal SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE XTF 27 VTF 28 ITF 29 PTF 30 CJC 31 VJC 32 MJC 33 XCJC ( (1) 35 CJS (1) 36 VJS ...
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... NXP Semiconductors NPN 2 GHz RF power transistor Test circuit information R2 V bias handbook, full pagewidth 50 input C1 Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz C14, C15, C16 L10 L9 C11 C10 L8 DUT L2 L1 C2, C3, C4, C5 Rev November 2007 Product specification BFG10; BFG10/X ...
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... NXP Semiconductors NPN 2 GHz RF power transistor List of components used in test circuit (see Fig.7) COMPONENT C1, C9, C10, C11 multilayer ceramic chip capacitor; note 1 C2, C3, C4, C5, multilayer ceramic chip capacitor; note 1 C6 multilayer ceramic chip capacitor; note 1 C12, C13 electrolytic capacitor C14, C15, C16 multilayer ceramic chip capacitor ...
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... NXP Semiconductors NPN 2 GHz RF power transistor handbook, full pagewidth 60 V bias Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. ...
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... NXP Semiconductors NPN 2 GHz RF power transistor PACKAGE OUTLINE handbook, full pagewidth 0.75 0. max 1.1 max Dimensions in mm. 3.0 2.8 0.150 1.9 0.090 4 3 0.1 max o 10 max 0.88 0.48 max 0.1 1.7 TOP VIEW Fig.9 SOT143. Rev November 2007 Product specification BFG10 ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors Revision history Revision history Document ID Release date BFG10X_N_5 20071122 • Modifications: Marking table on page 2; changed code BFG10X_4 19950831 BFG10X_3 19950307 BFG10X_2 - BFG10X_1 - Data sheet status Change notice Product data sheet - Product specification - - - - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘ ...