BFG10/X,215 NXP Semiconductors, BFG10/X,215 Datasheet - Page 6

• Manufacturer Part Number: BFG10/X,215
• Description: TRANS RF NPN 2GHZ 8V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG10/X,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 1.9GHz
• Gain: 7dB
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6184-2; BFG10/X,215

NXP Semiconductors
Test circuit information
handbook, full pagewidth
NPN 2 GHz RF power transistor
V bias
input
50
Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz.
R2
C1
R1
L10
L9
L1
T1
Rev. 05 - 22 November 2007
L8
L2
C2, C3,
C4, C5
C11
C14, C15,
DUT
C16
C10
L3
V S
L4
L7
L6
C6, C7,
C8
C12
L5
C13
BFG10; BFG10/X
C9
MLC822
Product specification
output
50
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