BC856BDW1T1 ON Semiconductor, BC856BDW1T1 Datasheet

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BC856BDW1T1

Manufacturer Part Number
BC856BDW1T1
Description
TRANS PNP DUAL 65V 100MA SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC856BDW1T1

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 2mA, 5V
Power - Max
380mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-

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BC856BDW1T1G,
BC857BDW1T1G Series,
BC858CDW1T1G Series
Dual General Purpose
Transistors
PNP Duals
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 7
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current −Continuous
Total Device Dissipation Per Device
Thermal Resistance,
Junction and Storage Temperature
Range
These transistors are designed for general purpose amplifier
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
FR−5 Board (Note 1)
T
Derate Above 25°C
Junction−to−Ambient
A
Characteristic
= 25°C
Rating
Preferred Devices
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
Symbol
T
V
V
V
R
J
P
, T
CEO
CBO
EBO
I
qJA
C
D
stg
−55 to +150
Value
−100
−5.0
Max
−65
−45
−30
−80
−50
−30
380
250
328
3.0
1
mW/°C
mAdc
°C/W
Unit
Unit
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
3x
M
G
(Note: Microdot may be in either location)
Q
ORDERING INFORMATION
(3)
(4)
1
= Specific Device Code
= Date Code
= Pb−Free Package
x = B, F, G, or L
(See Ordering Information)
MARKING DIAGRAM
http://onsemi.com
SOT−363/SC−88
CASE 419B
STYLE 1
3x M G
(5)
Publication Order Number:
G
(2)
1
BC856BDW1T1/D
(1)
(6)
Q
2

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BC856BDW1T1 Summary of contents

Page 1

... SOT−363/SC−88 CASE 419B STYLE 1 MARKING DIAGRAM Specific Device Code (See Ordering Information Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BC856BDW1T1/D 2 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C Collector −Emitter Breakdown Voltage (I = −10 mA Collector −Base Breakdown Voltage (I = −10 mA) C Emitter −Base Breakdown Voltage ...

Page 3

TYPICAL CHARACTERISTICS − BC856 25°C A 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain -2.0 -1.6 I ...

Page 4

TYPICAL CHARACTERISTICS − BC857/BC858 2 - 25°C A 1.0 0.7 0.5 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 - COLLECTOR CURRENT (mAdc) C Figure 7. Normalized DC Current Gain -2.0 ...

Page 5

... V , COLLECTOR-EMITTER VOLTAGE (V) CE Figure 14. Active Region Safe Operating Area ORDERING INFORMATION Device BC856BDW1T1G BC856BDW1T3G BC857BDW1T1G BC857CDW1T1G BC858CDW1T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. P (pk) ...

Page 6

... E 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 0.65 0.025 0.65 0.025 mm ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC856BDW1T1/D ...

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