BC856BDW1T1 ON Semiconductor, BC856BDW1T1 Datasheet - Page 3

• Manufacturer Part Number: BC856BDW1T1
• Description: TRANS PNP DUAL 65V 100MA SOT-363
• Manufacturer: ON Semiconductor

Specifications of BC856BDW1T1

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -

-2.0
-1.6
-1.2
-0.8
-0.4
2.0
1.0
0.5
0.2
8.0
6.0
4.0
2.0
40
20
10
-0.1
0
-0.02
-0.1 -0.2
T
-10 mA
-0.2
J
I
V
T
C
= 25°C
A
-0.05
CE
=
Figure 3. Collector Saturation Region
= 25°C
= -5.0 V
-0.5
-0.1
-1.0
Figure 1. DC Current Gain
V
I
C
R
Figure 5. Capacitance
, COLLECTOR CURRENT (mA)
-2.0 -5.0
-20 mA
, REVERSE VOLTAGE (VOLTS)
-0.2
-1.0
I
B
, BASE CURRENT (mA)
-2.0
-0.5
C
ib
-10
-50 mA
-5.0
-1.0
-20
C
ob
TYPICAL CHARACTERISTICS − BC856
-2.0
-50 -100
-10
-100 mA
-20
T
-5.0
J
-200
= 25°C
-200 mA
-50
-10
http://onsemi.com
-100
-20
3
-1.0
-0.8
-0.6
-1.0
-1.4
-1.8
-2.6
-3.0
-2.2
-0.4
-0.2
500
200
100
50
20
0
-0.2
-0.2
Figure 4. Base−Emitter Temperature Coefficient
Figure 6. Current−Gain − Bandwidth Product
V
CE
T
-0.5
-0.5
J
q
= -5.0 V
V
= 25°C
V
V
VB
BE
CE(sat)
BE(sat)
for V
@ V
-1.0
-1.0
-1.0
@ I
BE
CE
@ I
I
I
I
C
Figure 2. “On” Voltage
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
-2.0
C
= -5.0 V
-2.0
C
/I
/I
B
B
= 10
= 10
-5.0
-5.0
-10
-10
-10
-55°C to 125°C
-20
-20
-100
-50 -100
-50 -100
-200
-200