STM32F103RGT6 STMicroelectronics, STM32F103RGT6 Datasheet - Page 65

• Manufacturer Part Number: STM32F103RGT6
• Description: MCU ARM 32BIT 1MB FLASH 64LQFP
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F103RGT6

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
• Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
• Number Of I /o: 51
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Ram Size: 96K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 16x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LFQFP
• Processor Series: STM32F101xG
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Data Ram Size: 80 KB
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 36 MHz
• Number Of Programmable I/os: 112
• Number Of Timers: 15
• Operating Supply Voltage: 2 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Operating Temperature Range: - 40 C to + 105 C
• Processor To Be Evaluated: STM32F103RG
• Supply Current (max): 28 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

STM32F103xF, STM32F103xG
Table 32.
1. C
2. Preliminary values.
Figure 24. Asynchronous multiplexed PSRAM/NOR read waveforms
Table 33.
t
t
t
t
t
t
t
t
t
t
t
v(NADV_NE)
w(NADV)
w(NE)
v(NOE_NE)
w(NOE)
h(NE_NOE)
v(A_NE)
v(NADV_NE)
w(NADV)
h(AD_NADV)
h(A_NOE)
Symbol
Symbol
L
= 15 pF.
FSMC_NBL[1:0]
FSMC_ AD[15:0]
FSMC_A[25:16]
FSMC_NADV
FSMC_NWE
FSMC_NOE
Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings
Asynchronous multiplexed PSRAM/NOR read timings
FSMC_NE
FSMC_NEx low to FSMC_NADV low
FSMC_NADV low time
FSMC_NE low time
FSMC_NEx low to FSMC_NOE low
FSMC_NOE low time
FSMC_NOE high to FSMC_NE high hold time
FSMC_NEx low to FSMC_A valid
FSMC_NEx low to FSMC_NADV low
FSMC_NADV low time
FSMC_AD (address) valid hold time after
FSMC_NADV high
Address hold time after FSMC_NOE high
Parameter
Parameter
Doc ID 16554 Rev 2
t
t
t
v(NADV_NE)
v(A_NE)
v(A_NE)
t
t
t
v(NOE_NE)
v(BL_NE)
w(NADV)
Address
Address
t
h(AD_NADV)
t
w(NE)
NBL
t
su(Data_NOE)
t
t
w(NOE)
su(Data_NE)
7T
3T
4T
–1
3
T
T
T
Data
HCLK
HCLK
HCLK
HCLK
HCLK
HCLK
t
h(NE_NOE)
t
Min
Min
h(BL_NOE)
t
h(A_NOE)
–1.5
Electrical characteristics
– 2
– 0.5 3T
– 1
(1)(2)
7T
4T
0
5
T
T
5.5
HCLK
HCLK
HCLK
HCLK
HCLK
Max
Max
t
h(Data_NOE)
t
+ 1.5
h(Data_NE)
+ 1.5
+ 2
+ 1.5
+ 2
ai14892b
(1)(2)
65/120
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
Unit