MCZ33905BS3EK Freescale Semiconductor, MCZ33905BS3EK Datasheet - Page 20

• Manufacturer Part Number: MCZ33905BS3EK
• Description: IC SBC CAN HS 3.3V 32SOIC
• Manufacturer: Freescale Semiconductor

Specifications of MCZ33905BS3EK

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 4. Static Electrical Characteristics (continued)
noted reflect the approximate parameter means at T
20
33903/4/5
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Notes
V
Output Voltage
Drop voltage without external PNP pass transistor
Drop voltage with external transistor
VSUP/1 to maintain V
External ballast versus internal current ratio (I
Output Current limitation, without external transistor
Temperature pre-warning (Guaranteed by design)
Thermal shutdown (Guaranteed by design)
Range of decoupling capacitor (Guaranteed by design)
LP Mode V
LP Mode V
device description).
LP V
LP Mode V
device description)
LP Mode V
reset may occur)
V
V
V
13.
14.
DD
Characteristics noted under conditions 5.5 V ≤ V
DD
DD
SUP-TH1
V
V
V
V
I
V
V
V
V
Over-current Wake-Up threshold.
Hysteresis
OUT
VOLTAGE REGULATOR, VDD PIN
DD
DD
DD
DD
DD
DD
DD
DD
when V
when V
DD
For 3.3 V V
voltage parameter cannot be specified.
The regulator is stable without an external capacitor. Usage of an external capacitor is recommended for AC performance.
= 5.0 V, V
= 3.3 V, V
= 5.0 V, I
= 5.0 V, I
= 3.3 V, I
= 3.3 V, I
= 5.0 V, 5.6 V ≤ V
= 3.3 V, 5.6 V ≤ V
= 200 mA (I
ON Mode:
DD
DD
DD
DD
SUP
SUP
ON, min V
ON, dynamic output current capability (Limited duration. Ref. to
ON, I
ON, drop voltage, at I
< V
≥
OUT
OUT
OUT
OUT
SUP
SUP
DD
V
(13)
OUT
_BALLAST
SUP-TH1
SUP-TH1
devices, the drop-out voltage test condition leads to a V
= 100 mA
= 150 mA
= 150 mA
= 200 mA, external transistor implemented
DD
5.5 to 28 V, I
5.5 to 28 V, I
SUP
≤ 50 mA (time limited)
within V
SUP
SUP
, at I_V
, at I_V
operation (Below this value, a V
+ I
≤ 28 V
≤ 28 V
Characteristic
_INTERNAL
OUT-3.3
OUT
OUT
DD
DD
OUT
(13)
≤ 10 μA (Guaranteed by design)
≤ 40 mA (Guaranteed with parameter
0 to 150 mA
0 to 150 mA
= 30 mA (Limited duration. Ref. to
specified voltage range
)
_BALLAST
(13)
(14)
= K x Internal current)
SUP
A
= 25 °C under nominal conditions, unless otherwise noted.
DD
≤ 28 V, - 40 °C ≤ T
, under-voltage
SUP
V
below the min V
DD_START UP
A
L
V
L
V
V
V
L
V
Symbol
P-IOUTDC
V
P-VDROP
≤ 125 °C, unless otherwise noted. Typical values
SUP1-3.3
V
P-MINVS
L
DD_OFF
OUT
OUT
DROP-B
C
T
DROP
I
T
DDLP
P-ITH
LIM
EXT
K
PW
SD
-5.0
-3.3
SUP
3.234
3.135
4.75
Min
150
160
Analog Integrated Circuit Device Data
4.9
4.0
4.0
1.5
4.7
1.0
0.1
5.5
3.0
threshold (4.0 V). As a result, the dropout
-
-
-
-
-
-
-
Typ
330
350
350
140
200
5.0
3.3
2.0
5.0
3.3
3.0
1.0
-
-
-
-
-
-
-
-
-
Freescale Semiconductor
3.366
3.465
Max
5.25
450
500
500
550
100
400
5.1
2.5
0.3
50
-
-
-
-
-
-
-
-
Unit
mV
mV
mA
mA
mA
mV
°C
°C
μF
V
V
V
V
V
V