ADF4360-1BCPZ Analog Devices Inc, ADF4360-1BCPZ Datasheet - Page 6

IC, FREQ SYNTHESIZER & VCO 2.45GHZ LFCSP

ADF4360-1BCPZ

Manufacturer Part Number
ADF4360-1BCPZ
Description
IC, FREQ SYNTHESIZER & VCO 2.45GHZ LFCSP
Manufacturer
Analog Devices Inc
Type
Fanout Distribution, Integer N Synthesizer (RF)r
Datasheet

Specifications of ADF4360-1BCPZ

Pll Type
Frequency Synthesis
Frequency
2.45GHz
Supply Current
10mA
Supply Voltage Range
3V To 3.6V
Digital Ic Case Style
LFCSP
No. Of Pins
24
Operating Temperature Range
-40°C To +85°C
Pll
Yes
Input
CMOS
Output
Clock
Number Of Circuits
1
Ratio - Input:output
1:2
Differential - Input:output
No/No
Frequency - Max
2.45GHz
Divider/multiplier
Yes/No
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
24-LFCSP
Frequency-max
2.45GHz
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
EVAL-ADF4360-1EBZ1 - BOARD EVALUATION FOR ADF4360-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ADF4360-1BCPZ
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Part Number:
ADF4360-1BCPZRL7
Manufacturer:
ADI/亚德诺
Quantity:
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ADF4360-1
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature Range
CSP θ
Lead Temperature, Soldering
1
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy elec-
trostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation
or loss of functionality.
GND = AGND = DGND = 0 V.
VCO
VCO
A
Maximum Junction Temperature
(Paddle Soldered)
(Paddle Not Soldered)
Vapor Phase (60 sec)
Infrared (15 sec)
DD
DD
= 25°C, unless otherwise noted.
IN
to GND
to AV
to GND
to DV
to GND
JA
Thermal Impedance
DD
DD
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
150°C
50°C/W
88°C/W
215°C
220°C
DD
DD
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. B | Page 6 of 24
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rat-
ing only; functional operation of the device at these or any
other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)

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