DSPIC30F2020-20E/SO Microchip Technology, DSPIC30F2020-20E/SO Datasheet - Page 41

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DSPIC30F2020-20E/SO

Manufacturer Part Number
DSPIC30F2020-20E/SO
Description
IC, DSC, 16BIT, 12KB 40MHZ, 5.5V, SOIC28
Manufacturer
Microchip Technology
Series
DsPIC30Fr

Specifications of DSPIC30F2020-20E/SO

Core Frequency
40MHz
Core Supply Voltage
5.5V
Embedded Interface Type
I2C, SPI, UART
No. Of I/o's
20
Flash Memory Size
12KB
Supply Voltage Range
2.5V To 5.5V
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
21
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-SOIC (7.5mm Width)
Package
28SOIC W
Device Core
dsPIC
Family Name
dsPIC30
Maximum Speed
20 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
16 Bit
Number Of Programmable I/os
21
Interface Type
I2C/SPI/UART
On-chip Adc
8-chx10-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM300023 - KIT DEMO DSPICDEM SMPS BUCKDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F2020-20E/SO
Manufacturer:
SMSC
Quantity:
1 000
Part Number:
DSPIC30F2020-20E/SO
Manufacturer:
MICROCH
Quantity:
20 000
12.0
12.1
If it is determined that the programming executive does
not reside in executive memory (as described in
Section 4.0 “Confirming The Contents of Executive
Memory”), it must be programmed into executive
memory using ICSP and the techniques described in
Section 11.0 “ICSP™
TABLE 12-1:
© 2010 Microchip Technology Inc.
Step 1: Exit the Reset vector and erase executive memory.
0000
0000
0000
Step 2: Initialize the NVMCON to erase executive memory.
0000
0000
Step 3: Unlock the NVMCON for programming.
0000
0000
0000
0000
Step 4: Initiate the erase cycle.
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
Step 5: Initialize the NVMCON to program 32 instruction words.
0000
0000
Step 6: Initialize TBLPAG and the write pointer (W7).
0000
0000
0000
0000
0000
Command
(Binary)
PROGRAMMING THE
PROGRAMMING EXECUTIVE
TO MEMORY
Overview
040100
040100
000000
24072A
883B0A
200558
883B38
200AA9
883B39
A8E761
000000
000000
000000
000000
A9E761
000000
000000
000000
000000
24001A
883B0A
200800
880190
EB0380
000000
000000
PROGRAMMING THE PROGRAMMING EXECUTIVE
(Hex)
Data
Mode”.
GOTO 0x100
GOTO 0x100
NOP
MOV
MOV
MOV
MOV
MOV
MOV
BSET NVMCON, #15
NOP
NOP
NOP
NOP
Externally time 'P19a' msec
Requirements”)
BCLR NVMCON, #15
NOP
NOP
NOP
NOP
MOV
MOV
MOV
MOV
CLR
NOP
NOP
#0x4072, W10
W10, NVMCON
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
#0x4001, W10
W10, NVMCON
#0x80, W0
W0, TBLPAG
W7
Storing the programming executive to executive
memory is similar to normal programming of code
memory. Namely, the executive memory must first be
erased, and then the programming executive must be
programmed 32 words at a time. This control flow is
summarized in
(see
Description
Section 13.0 “AC/DC Characteristics and Timing
Table
12-1.
DS70284C-page 41

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